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Proceedings Paper

Strained multiple-quantum-well lasers grown on GaSb emitting between 2 and 2.4 um
Author(s): Alexei N. Baranov; Y. Cuminal; N. Bertru; Claude L. Alibert; Andre Francis Joullie
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Paper Abstract

Low threshold lasers based on GaInSbAs/GaSb type-II QW structures operating between 2 and 2.4 micrometers at room temperature have been fabricated. The RT threshold current density as low as 305 A/cm2 was obtained for a 900- micrometers -long laser emitting at 2.36 micrometers . High efficiency of indirect radiative recombination is explained by accumulation of holes in potential wells situated in barrier layers near the QW interfaces.

Paper Details

Date Published: 23 January 1997
PDF: 12 pages
Proc. SPIE 2997, Integrated Optics Devices: Potential for Commercialization, (23 January 1997); doi: 10.1117/12.264141
Show Author Affiliations
Alexei N. Baranov, Univ. de Montpellier II (France)
Y. Cuminal, Univ. de Montpellier II (France)
N. Bertru, Univ. de Montpellier II (France)
Claude L. Alibert, Univ. de Montpellier II (France)
Andre Francis Joullie, Univ. de Montpellier II (France)


Published in SPIE Proceedings Vol. 2997:
Integrated Optics Devices: Potential for Commercialization
S. Iraj Najafi; Mario Nicola Armenise, Editor(s)

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