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Proceedings Paper

PC-based automated extraction of electrical parameters for VLSI MOSFETs: methods, algorithms, and implementation
Author(s): Sergio Bampi
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Paper Abstract

Experimental and algorithmic methods used for extracting electrical model parameters for small geometry MOS transistors are discussed. Results for such methods in micron-sized transistors are shown and SEPE - a PC-based algorithmic extractor using Levenberg-Marquardt algorithm for nonlinear fitting of DC parameters - is described. Its architecture and functions are presented followed by some specific results.

Paper Details

Date Published: 1 November 1990
PDF: 10 pages
Proc. SPIE 1405, 5th Congress of the Brazilian Society of Microelectronics, (1 November 1990); doi: 10.1117/12.26308
Show Author Affiliations
Sergio Bampi, Univ. Federal do Rio Grande do Sul (Brazil)

Published in SPIE Proceedings Vol. 1405:
5th Congress of the Brazilian Society of Microelectronics
Vitor Baranauskas, Editor(s)

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