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Proceedings Paper

Hot electron launching using the AlxGa1-xAs/GaAs n-n heterojunction
Author(s): Humberto Abreu Santos; Carlos Ferreira Fernandes; Antonio Cruz Serra
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Paper Abstract

GaAs/AlxGa1-xAs isotype n heterojunctions have been used as microwave rectifier diodes and recently suggested for hot electron launching. Namely, direct injection of electrons into the upper valleys of GaAs along the (100) direction has been referred, as a means of providing suitable initial conditions for the formation of electric field impoverishment modes. We now consider, by numerical simulation, the series association of the GaAs/AlGaAs heterojunction as the cathode injector of a GaAs Gunn diode. A thermionic injection type model is used to establish the electron conditions at the cathode contact on the GaAs side. From there on to the anode, electron transport is calculated by using a matrix that is calculated by Monte Carlo. It takes into account ballistic effects and is framed by Boltzmann''s transport equation (BTE). Simulation results predict an improvement in the efficiency of microwave power conversion in the transit time mode applications, by using hot electron launching. Optimization corresponds to an Al content x equals 0.3 in the ternary compound of the AlGaAs/GaAs heterojunction. For a n type GaAs diode with L equals 3 micrometers and doped with 1022 m-3, a Al0.3Ga0.7As n layer is predicted to lead to current oscillations of about 30 GHz.

Paper Details

Date Published: 1 November 1990
PDF: 9 pages
Proc. SPIE 1405, 5th Congress of the Brazilian Society of Microelectronics, (1 November 1990); doi: 10.1117/12.26302
Show Author Affiliations
Humberto Abreu Santos, IST (Portugal)
Carlos Ferreira Fernandes, IST (Portugal)
Antonio Cruz Serra, IST (Portugal)

Published in SPIE Proceedings Vol. 1405:
5th Congress of the Brazilian Society of Microelectronics
Vitor Baranauskas, Editor(s)

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