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Proceedings Paper

Analytical model for the potential drop in the silicon substrate on thin-film SOI MOSFETs and its influence on the threshold voltage
Author(s): Joad A. Martino; L. Lauwers; Jean Pierre Colinge
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Paper Abstract

A simple analytical model for the potential drop in the silicon substrate on thin film SOI MOSFET''s is developed. The model clearly show the dependence of this potential drop on the process parameters. The analysis is supported by numerical simulation from PISCES. A very good fitting in the depletion region and a reasonable agreement in the accumulation and inversion regions is obtained. The effect of this potential drop in the substrate on the threshold voltage is analyzed and it is shown that when the back oxide thickness decreases, the influence on the threshold voltage increases in the same proportion. It is also shown that if we don''t have a good control of the back-oxide/substrate interface, it will be difficult to know the value of the threshold voltage deviation because of its high sensitivity to changes in interface charge density.

Paper Details

Date Published: 1 November 1990
PDF: 10 pages
Proc. SPIE 1405, 5th Congress of the Brazilian Society of Microelectronics, (1 November 1990); doi: 10.1117/12.26296
Show Author Affiliations
Joad A. Martino, Univ. de Sao Paolo (Brazil)
L. Lauwers, IMEC (Belgium)
Jean Pierre Colinge, IMEC (Belgium)


Published in SPIE Proceedings Vol. 1405:
5th Congress of the Brazilian Society of Microelectronics

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