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Proceedings Paper

Influence of process parameters on the growth of YBCO thin films deposited by excimer laser ablation
Author(s): R. A. Chakalov; Zdravko G. Ivanov; P. Larsson; Rumen I. Tomov
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Paper Abstract

The aim of this work was to investigate the growth mechanism of Y1Ba2Cu3O7-(delta ) thin films prepared by KrF and XeCl excimer laser ablation on different substrate. To investigate the film's properties - morphology, epitaxy, c-axis length and critical temperature (Tc) - we varied the process parameters - oxygen partial pressure, substrate temperature and laser energy density. The films were analyzed by (Theta) -2(Theta) XRD, (phi) -scan XRD, optical microscopy, AFM, prophilometry and electric measurements.

Paper Details

Date Published: 27 December 1996
PDF: 5 pages
Proc. SPIE 3052, Ninth International School on Quantum Electronics: Lasers--Physics and Applications, (27 December 1996); doi: 10.1117/12.262955
Show Author Affiliations
R. A. Chakalov, Institute of Electronics (Bulgaria)
Zdravko G. Ivanov, Chalmers Univ. of Technology (Sweden)
P. Larsson, Chalmers Univ. of Technology (Sweden)
Rumen I. Tomov, Institute of Electronics (Bulgaria)

Published in SPIE Proceedings Vol. 3052:
Ninth International School on Quantum Electronics: Lasers--Physics and Applications
Peter A. Atanasov, Editor(s)

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