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Proceedings Paper

Preparation of LiNbO3 thin films by XeCl excimer laser ablation
Author(s): Peter A. Atanasov; Rumen I. Tomov; Totka D. Kabadjova; Dmitre G. Ouzounov; V. Tzanev
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Paper Abstract

Laser pulsed deposition technique was utilized for preparation of LiNbO3 thin films on sapphire and GaAs substrates. XeCl excimer laser was used for the ablation of monocrystalline LiNbO3 target. The deposition was performed in oxygen atmosphere at different substrate temperatures. The ablation threshold was determined from the experimental results presented ablation rate vs. on laser fluence dependence. The films were characterized by XRD, SEM and ellipsometry.

Paper Details

Date Published: 27 December 1996
PDF: 5 pages
Proc. SPIE 3052, Ninth International School on Quantum Electronics: Lasers--Physics and Applications, (27 December 1996); doi: 10.1117/12.262954
Show Author Affiliations
Peter A. Atanasov, Institute of Electronics (Bulgaria)
Rumen I. Tomov, Institute of Electronics (Bulgaria)
Totka D. Kabadjova, Institute of Electronics (Bulgaria)
Dmitre G. Ouzounov, Institute of Electronics (Bulgaria)
V. Tzanev, Institute of Electronics (Bulgaria)


Published in SPIE Proceedings Vol. 3052:
Ninth International School on Quantum Electronics: Lasers--Physics and Applications
Peter A. Atanasov, Editor(s)

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