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Proceedings Paper

Preparation of Ti:sapphire thin films on sapphire substrates by XeCl excimer laser ablation
Author(s): Peter A. Atanasov; Rumen I. Tomov; Anna O. Dikovska; Zdravka I. Aneva; Vasilka Tsaneva; Zahari Y. Peshev
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Paper Abstract

This work summarized the results of XeCl excimer laser ablation deposition procedure of Ti-doped sapphire thin films. Three types of targets are utilized-monocrystalline and two different ceramics synthesized in vacuum and H2 ambient. The influence of the target's type in the film quality is studied. The films are investigated by XRD and SEM, as well as by optical methods. Optical emission measurements of laser ablated plumes are performed.

Paper Details

Date Published: 27 December 1996
PDF: 4 pages
Proc. SPIE 3052, Ninth International School on Quantum Electronics: Lasers--Physics and Applications, (27 December 1996); doi: 10.1117/12.262953
Show Author Affiliations
Peter A. Atanasov, Institute of Electronics (Bulgaria)
Rumen I. Tomov, Institute of Electronics (Bulgaria)
Anna O. Dikovska, Institute of Electronics (Bulgaria)
Zdravka I. Aneva, Institute of Solid State Physics (Bulgaria)
Vasilka Tsaneva, Institute of Electronics (Bulgaria)
Zahari Y. Peshev, Institute of Electronics (Bulgaria)


Published in SPIE Proceedings Vol. 3052:
Ninth International School on Quantum Electronics: Lasers--Physics and Applications
Peter A. Atanasov, Editor(s)

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