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Proceedings Paper

Double-level metal process for 1-um technologies
Author(s): Alain Rey
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Paper Abstract

Sandwich structures composed of various contact materials and Ti:W barrier layer are compared. Their contact resistance and reliability datas are given. The step coverage of APCVD borosilicate glass (BSG) is described in detail on a new graphic representation. BSG is shown to have superior step coverage properties. Recommendations for optimal void free deposition are described. The application of these layers is illustrated in a 1 micrometers double level metal process.

Paper Details

Date Published: 1 November 1990
PDF: 28 pages
Proc. SPIE 1405, 5th Congress of the Brazilian Society of Microelectronics, (1 November 1990); doi: 10.1117/12.26295
Show Author Affiliations
Alain Rey, Thomson Composants Militaires (France)

Published in SPIE Proceedings Vol. 1405:
5th Congress of the Brazilian Society of Microelectronics
Vitor Baranauskas, Editor(s)

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