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Proceedings Paper

Improvement of thermal SiO2 properties for advanced MOS technologies
Author(s): Afonso H. Costa e Silva; Yasushiro Nishioka; Carlos Leonidas Da Silva
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Paper Details

Date Published: 1 November 1990
PDF: 7 pages
Proc. SPIE 1405, 5th Congress of the Brazilian Society of Microelectronics, (1 November 1990); doi: 10.1117/12.26293
Show Author Affiliations
Afonso H. Costa e Silva, Univ. Federal de Pernambuco (Brazil)
Yasushiro Nishioka, Univ. Federal de Pernambuco (Brazil)
Carlos Leonidas Da Silva, Univ. Federal de Pernambuco (Brazil)


Published in SPIE Proceedings Vol. 1405:
5th Congress of the Brazilian Society of Microelectronics

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