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Proceedings Paper

Improvement of thermal SiO2 properties for advanced MOS technologies
Author(s): Afonso H. Costa e Silva; Yasushiro Nishioka; Carlos Leonidas Da Silva
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Paper Abstract

The incorporation of small amounts of fluorine in the silicon dioxide during thermal oxidation has resulted in substantial changes on its electrical and physical properties: The oxidation rates are increased, the breakdown strength is raised, and a substantial improvement of the radiation response of Metal-Oxide-Semiconductor (MOS) structures is observed. In the latter, the improvements occur in the generation of positive oxide charge and interface traps, and the long-term post- irradiation buildup of the interface traps is either suppressed or greatly reduced. These results beyond its scientific implications are of significant technological importance towards the development of advanced MOS technologies.

Paper Details

Date Published: 1 November 1990
PDF: 7 pages
Proc. SPIE 1405, 5th Congress of the Brazilian Society of Microelectronics, (1 November 1990); doi: 10.1117/12.26293
Show Author Affiliations
Afonso H. Costa e Silva, Univ. Federal de Pernambuco (Brazil)
Yasushiro Nishioka, Univ. Federal de Pernambuco (Brazil)
Carlos Leonidas Da Silva, Univ. Federal de Pernambuco (Brazil)

Published in SPIE Proceedings Vol. 1405:
5th Congress of the Brazilian Society of Microelectronics
Vitor Baranauskas, Editor(s)

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