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Proceedings Paper

Improved PBS process for e-beam photomask lithography
Author(s): Wayne P. Shen; James W. Marra; Douglas J. Van Den Broeke
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Paper Abstract

An improved PBS process has been developed and tested for the photomask production. Significant improvements in CD uniformity (3(sigma) < 40 nm over 6' plates) and CD meant- to-target control (< 30 nm) have been achieved through a specially treated puddle development. A low-temperature bake (95 degree(s)C, 30 minutes) was utilized for better linearity while the resolution was 0.5 micrometers for the regular process and as low as 0.35 micrometers for the ghosting process. Defect densities on production plates have been greatly improved to a level lower than our normal production process. The new process is not limited by any specific type of processor, therefore it can be implemented into current production lines easily. It is expected that this new process will meet advanced specs for 256 M DRAM (with 0.25 micrometers design rule) and extend the life of the PBS production line for another 3 - 4 years.

Paper Details

Date Published: 27 December 1996
PDF: 19 pages
Proc. SPIE 2884, 16th Annual BACUS Symposium on Photomask Technology and Management, (27 December 1996); doi: 10.1117/12.262846
Show Author Affiliations
Wayne P. Shen, Photronics, Inc. (United States)
James W. Marra, Photronics, Inc. (United States)
Douglas J. Van Den Broeke, Photronics, Inc. (United States)


Published in SPIE Proceedings Vol. 2884:
16th Annual BACUS Symposium on Photomask Technology and Management
Gilbert V. Shelden; James A. Reynolds, Editor(s)

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