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Proceedings Paper

Conducting poly(aniline-co-N-propanesulfonic acid aniline) (PAPSAH) as charge dissipation layer for e-beam lithography
Author(s): Shyi-Long Shy; T. S. Chao; Tan Fu Lei; Shaw-An Chen; Wen-An Loong; Chun-Yen Chang
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Paper Abstract

In this paper, the deep submicron complementary metal-oxide- semiconductor (CMOS) devices were fabricated. A conducting poly(aniline-co-N-propanesulfonic acid aniline) (PAPSAH) as charge dissipation layer for e-beam lithography is used for direct writing the critical polysilicon gate level. Most of the specification of the designed CMOS parameters are met. The optimum conditions for submicron to 0.15 micrometers line/space of polysilicon gate using PAPSAH as charge dissipation layer for e-beam lithography are also established.

Paper Details

Date Published: 27 December 1996
PDF: 12 pages
Proc. SPIE 2884, 16th Annual BACUS Symposium on Photomask Technology and Management, (27 December 1996); doi: 10.1117/12.262831
Show Author Affiliations
Shyi-Long Shy, National Nano Device Lab. (Taiwan)
T. S. Chao, National Nano Device Lab. (Taiwan)
Tan Fu Lei, National Nano Device Lab. (Taiwan)
Shaw-An Chen, National Tsing-Hwa Univ. (Taiwan)
Wen-An Loong, National Nano Device Lab. (Taiwan)
Chun-Yen Chang, National Nano Device Lab. (Taiwan)


Published in SPIE Proceedings Vol. 2884:
16th Annual BACUS Symposium on Photomask Technology and Management
Gilbert V. Shelden; James A. Reynolds, Editor(s)

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