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Proceedings Paper

Development of deep-UV MoSi-based embedded phase-shifting mask (EPSM) blanks
Author(s): Masao Ushida; Masaru Mitsui; Kimihiri Okada; Yasushi Okubo; Hideki Suda; Hideo Kobayashi; Keishi Asakawa
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Paper Abstract

Embedded phase-shift mask (EPSM) has an advantage in comparison with several other phase-shifting mask approaches because of its simple structure and fabrication process. We tried to modify MoSi-based EPSM blanks by re-examining the material and by optimizing sputtering condition in order to produce more useful EPSM blanks for Deep UV lithography technology. New MoSi-based EPSM blanks for which Nitrogen gas is used as the reactive sputtering gas has been developed. And it has been confirmed that the New MoSi-based EPSM (MoSi-N) blanks are superior to HOYA previously developed one (MoSi-ON) in chemical durability, manufacturing stability and Dry Etching property.

Paper Details

Date Published: 27 December 1996
PDF: 9 pages
Proc. SPIE 2884, 16th Annual BACUS Symposium on Photomask Technology and Management, (27 December 1996); doi: 10.1117/12.262825
Show Author Affiliations
Masao Ushida, HOYA Corp. (Japan)
Masaru Mitsui, HOYA Corp. (Japan)
Kimihiri Okada, HOYA Corp. (Japan)
Yasushi Okubo, HOYA Corp. (Japan)
Hideki Suda, HOYA Corp. (Japan)
Hideo Kobayashi, HOYA Corp. (Japan)
Keishi Asakawa, HOYA Corp. (Japan)


Published in SPIE Proceedings Vol. 2884:
16th Annual BACUS Symposium on Photomask Technology and Management
Gilbert V. Shelden; James A. Reynolds, Editor(s)

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