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Proceedings Paper

Application of direct-write electron-beam lithography for deep-submicron fabrication
Author(s): Shyi-Long Shy; Jen Yu Yew; Kazumitsu Nakamura; Chun-Yen Chang
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Paper Abstract

Lithography is one of the most important techniques in the IC fabrication and has been extensively used in processing. The high resolution and accuracy of electron beam lithography is most appropriate for making mask of optical and X-ray lithography as well as direct writing on wafer. Two types of resist, ZEP-520 positive resist and SAL-601 negative resist, were prepared for used in the electron beam lithography. Three different patterns, which include isolated line, contact hole and line and space patterns were exposed on the tungsten, oxide, and metal substrates, respectively. The 0.15 micrometers resolution of lithography patterns was achieved. For the etching of polysilicon and oxide, well defined profile of polysilicon gate with 0.1 micrometers width and well-defined tapered profiles of oxide contact hole have been obtained successfully.

Paper Details

Date Published: 27 December 1996
PDF: 10 pages
Proc. SPIE 2884, 16th Annual BACUS Symposium on Photomask Technology and Management, (27 December 1996); doi: 10.1117/12.262816
Show Author Affiliations
Shyi-Long Shy, National Nano Device Lab. (Taiwan)
Jen Yu Yew, National Nano Device Lab. (Taiwan)
Kazumitsu Nakamura, National Nano Device Lab. (Japan)
Chun-Yen Chang, National Nano Device Lab. (Taiwan)


Published in SPIE Proceedings Vol. 2884:
16th Annual BACUS Symposium on Photomask Technology and Management
Gilbert V. Shelden; James A. Reynolds, Editor(s)

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