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Proceedings Paper

Patterning of membrane masks for projection e-beam lithography
Author(s): Linus A. Fetter; Christopher J. Biddick; Myrtle I. Blakey; James Alexander Liddle; Milton L. Peabody; Anthony E. Novembre; Donald M. Tennant
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Paper Abstract

A process for high-resolution patterning of the membrane- type masks used in the SCALPEL (SCattering with Angular Limitation in Projection Electron-beam Lithography) lithography system is described. SCALPEL is a 4X projection electron beam lithography tool with the potential to extend commercial lithographic capability well into the deep sub-micron range: the recently-completed SCALPEL proof- of-concept (SPOC) system has printed 0.08 micrometers lines in thick resist on Si. The details of the patterning process we currently employ and metrology results from the first series of masks are presented here. The SPOC mask blank consists of a segmented W-coated SiN (Si-rich) membrane, fabricated on a 4' Si wafer. The blank is patterned with 45 different test chips using a vector-scanned e-beam lithography tool. Metrology is performed on completed masks, and results from measurements of line-edge roughness, CD linearity, and pattern uniformity are presented. We examine the need for proximity effect correction of the pattern data, and compare the effect of correction on pattern data file size for a variety of mask technologies.

Paper Details

Date Published: 27 December 1996
PDF: 12 pages
Proc. SPIE 2884, 16th Annual BACUS Symposium on Photomask Technology and Management, (27 December 1996); doi: 10.1117/12.262810
Show Author Affiliations
Linus A. Fetter, Lucent Technologies (United States)
Christopher J. Biddick, Lucent Technologies (United States)
Myrtle I. Blakey, Lucent Technologies (United States)
James Alexander Liddle, Lucent Technologies (United States)
Milton L. Peabody, Lucent Technologies (United States)
Anthony E. Novembre, Lucent Technologies (United States)
Donald M. Tennant, Lucent Technologies (United States)


Published in SPIE Proceedings Vol. 2884:
16th Annual BACUS Symposium on Photomask Technology and Management
Gilbert V. Shelden; James A. Reynolds, Editor(s)

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