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Proceedings Paper

Materials screening for attenuating embedded phase-shift photoblanks for DUV and 193-nm photolithography
Author(s): Peter F. Carcia; Roger H. French; Kenneth G. Sharp; Jeff S. Meth; Bruce W. Smith
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Paper Abstract

We surveyed more than 150 different materials as candidates for optically tunable (at 248 nm and 193 nm), attenuating embedded phase-shift masks. Multicomponent materials with four distinct microstructures: (1) composites, (2) cermets, (3) multilayers, and (4) copolymers, where one component was optically clear at the application wavelength and the other component more optically absorbing, provided a systematic approach for adjusting the needed optical properties: specifically, optical transmission and (pi) -phase-shift. From evaluation of optical properties and other mask manufacturability issues, including chemical and radiation durability, etch selectivity, alignment and inspection properties, film stress and adhesion, we identified promising nitride and oxide materials based on MNx-AIN (M equals Cr, Mo, W,...) and M'Oy-RuO2 (M' equals Al, HF, Zr...) as well as promising polymers.

Paper Details

Date Published: 27 December 1996
PDF: 9 pages
Proc. SPIE 2884, 16th Annual BACUS Symposium on Photomask Technology and Management, (27 December 1996); doi: 10.1117/12.262809
Show Author Affiliations
Peter F. Carcia, DuPont Co. Central Research (United States)
Roger H. French, DuPont Co. Central Research (United States)
Kenneth G. Sharp, DuPont Co. Central Research (United States)
Jeff S. Meth, DuPont Co. Central Research (United States)
Bruce W. Smith, Rochester Institute of Technology (United States)

Published in SPIE Proceedings Vol. 2884:
16th Annual BACUS Symposium on Photomask Technology and Management
Gilbert V. Shelden; James A. Reynolds, Editor(s)

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