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Proceedings Paper

Wide frequency band radiation detector
Author(s): Steponas P. Asmontas; Jonas Gradauskas; Algirdas Suziedelis
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Paper Abstract

An original planar n-GaAs diode with n-n+ junction has been constructed to detect radiation in the range from millimeter wavelength. The operational principle of this detector is based on free carrier heating in semiconductor by incident power. The analytical formulae for the voltage arising in the planar diode under microwave and laser radiation obtained by solving phenomenological carrier transport and Poisson equations shows no frequency dependence of the detected voltage up to 1 millimeter wavelength. The frequency dependence of detected voltage in high frequency range results from the frequency dependence of the momentum relaxation time of hot carriers. Experimental results of microwave and laser radiation measurements have shown a good agrement with theoretical suggestions.

Paper Details

Date Published: 18 December 1996
PDF: 8 pages
Proc. SPIE 2842, Millimeter and Submillimeter Waves and Applications III, (18 December 1996); doi: 10.1117/12.262788
Show Author Affiliations
Steponas P. Asmontas, Semiconductor Physics Institute (Lithuania)
Jonas Gradauskas, Semiconductor Physics Institute (Lithuania)
Algirdas Suziedelis, Semiconductor Physics Institute (Lithuania)


Published in SPIE Proceedings Vol. 2842:
Millimeter and Submillimeter Waves and Applications III
Mohammed N. Afsar, Editor(s)

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