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Proceedings Paper

Far-infrared lasing due to intracenter optical transitions in Ge
Author(s): Igor V. Altukhov; Elena G. Chirkova; Miron S. Kagan; Konstantin A. Korolev; Valery P. Sinis
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Paper Abstract

Stimulated emission of far-IR radiation from uniaxially compressed p-Ge in strong electric fields is shown to be due to population inversion of strain split acceptor levels. The peak corresponding to the optical transitions between split- off and ground acceptor states is found in the spectrum of stimulated emission. The strong frequency tuning by stress due to pressure dependence of the energy splitting of these states is obtained. The inversion takes place as the split- off acceptor state is in the valence band continuum.

Paper Details

Date Published: 18 December 1996
PDF: 6 pages
Proc. SPIE 2842, Millimeter and Submillimeter Waves and Applications III, (18 December 1996); doi: 10.1117/12.262781
Show Author Affiliations
Igor V. Altukhov, Institute of Radio Engineering and Electronics (Russia)
Elena G. Chirkova, Institute of Radio Engineering and Electronics (Russia)
Miron S. Kagan, Institute of Radio Engineering and Electronics (Russia)
Konstantin A. Korolev, Institute of Radio Engineering and Electronics (Russia)
Valery P. Sinis, Institute of Radio Engineering and Electronics (Russia)


Published in SPIE Proceedings Vol. 2842:
Millimeter and Submillimeter Waves and Applications III
Mohammed N. Afsar, Editor(s)

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