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Proceedings Paper

Q-band monolithic rf optical photoreceiver using InP-based PIN-HEMT MBE selective epitaxy
Author(s): Richard Lai; Lawrence J. Lembo; Dennis Lo; Dwight C. Streit; Rosie Dia; Po-Hsin P. Liu; Fernando D. Alvarez; John C. Brock
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Paper Abstract

We report an RF optical InP-based PIN-HEMT photoreceiver operating across a measured 36-46 GHz frequency band fabricated on the same wafer using selective area regrowth with molecular beam epitaxy. The photoreceiver design consists of a 20 micron circular InGaAs/InP photodiode integrated with a wide band 0.15 micron gate length InGaAs/InAlAs/InP low noise amplifier optimized for 44 GHz operation. The heterodyne technique of beating the frequency of two lasers was used to generate an RF modulated light signal at 1.3 micron wavelength. The output of the photoreceiver was measured on a spectrum analyzer and was found to be -24 to -27 dBm across a 36-46 GHz band.

Paper Details

Date Published: 18 December 1996
PDF: 14 pages
Proc. SPIE 2842, Millimeter and Submillimeter Waves and Applications III, (18 December 1996); doi: 10.1117/12.262762
Show Author Affiliations
Richard Lai, TRW, Inc. (United States)
Lawrence J. Lembo, TRW, Inc. (United States)
Dennis Lo, TRW, Inc. (United States)
Dwight C. Streit, TRW, Inc. (United States)
Rosie Dia, TRW, Inc. (United States)
Po-Hsin P. Liu, TRW, Inc. (United States)
Fernando D. Alvarez, TRW, Inc. (United States)
John C. Brock, TRW, Inc. (United States)

Published in SPIE Proceedings Vol. 2842:
Millimeter and Submillimeter Waves and Applications III
Mohammed N. Afsar, Editor(s)

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