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Proceedings Paper

Preliminary test results of a resonant Ge:Ga far-infrared photoconductor
Author(s): Jam Farhoomand; Bill Knowlton; Robert E. McMurray; Eugene E. Haller
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Paper Abstract

Theoretical analysis indicates that resonant infrared photoconductors can achieve unit quantum efficiency at resonant frequencies. This concept, which is based on establishing a resonant absorption cavity internal to the detector element, offers numerous other enhancements and advantages over conventional detectors. Here, we present an overview of the operation of the device and outline the fabrication process of a Ge:Ga far-IR photoconductor. The preliminary test results performed on a prototype Ge:Ga detector show the expected resonant fringes with enhanced response. The summary of the results and the status of the project will be discussed.

Paper Details

Date Published: 18 December 1996
PDF: 6 pages
Proc. SPIE 2842, Millimeter and Submillimeter Waves and Applications III, (18 December 1996); doi: 10.1117/12.262760
Show Author Affiliations
Jam Farhoomand, TechnoScience Corp. (United States)
Bill Knowlton, Lawrence Berkeley National Lab. (United States)
Robert E. McMurray, NASA Ames Research Ctr. (United States)
Eugene E. Haller, Lawrence Berkeley National Lab. and Univ. of California/Berkeley (United States)


Published in SPIE Proceedings Vol. 2842:
Millimeter and Submillimeter Waves and Applications III
Mohammed N. Afsar, Editor(s)

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