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Proceedings Paper

Demonstration of a phase-lockable microwave to submillimeter wave sweeper
Author(s): Steve B. Waltman; Leo W. Hollberg; Alexander K. McIntosh; Elliott R. Brown
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Paper Abstract

The development of low-temperature-grown GaAs photomixers enables the construction of a microwave to submillimeter- wave source capable of large frequency sweeps. By utilizing semiconductor diode lasers to drive the photomixer, this source is all solid-state and compact, and has small power consumption. Frequency stabilization of the semiconductor diode lasers allows this source to be phase-locked to an external microwave reference. Two 805 nm extended-cavity- diode lasers are mixed in a low-temperature-grown GaAs photoconductive photomixer. The difference-frequency mixing product is radiated by a planar spiral antenna and collimated by a Si lens. This output is phase-locked to a microwave reference by downconverting it in a whisker- contacted Schottky-barrier diode harmonic mixer and using the output to offset-phase-lock one laser to the other. The photomixer output power is 300 nW at 200 GHz and 10 nW at 1.6 THz, as measured by a 4 K InSb bolometer calibrated with a methanol laser and a power meter at 526 and 812 GHz.

Paper Details

Date Published: 18 December 1996
PDF: 4 pages
Proc. SPIE 2842, Millimeter and Submillimeter Waves and Applications III, (18 December 1996); doi: 10.1117/12.262739
Show Author Affiliations
Steve B. Waltman, National Institute of Standards and Technology (United States)
Leo W. Hollberg, National Institute of Standards and Technology (United States)
Alexander K. McIntosh, MIT Lincoln Lab. (United States)
Elliott R. Brown, DARPA/ETO (United States)


Published in SPIE Proceedings Vol. 2842:
Millimeter and Submillimeter Waves and Applications III
Mohammed N. Afsar, Editor(s)

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