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Proceedings Paper

Recent experimental results from a CMOS active pixel image sensor with photodiode and photogate pixels
Author(s): Johannes Solhusvik; Cyril Cavadore; F. X. Audoux; N. Verdier; Jean A. Farre; Olivier Saint-Pe; Robert Davancens; J. P. David
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Paper Abstract

An APS test circuit including three 32 by 32 arrays with photodiode and photogate pixels has been developed using a 1.2 micrometer double-layer polysilicon double-layer metal CMOS process. The first experimental results have been published in the Aerosense conference in Orlando (April 1996). In this paper we present the latest experimental results including radiation hardness, quantum efficiency and spot scan pixel sensitivity.

Paper Details

Date Published: 19 December 1996
PDF: 7 pages
Proc. SPIE 2950, Advanced Focal Plane Arrays and Electronic Cameras, (19 December 1996); doi: 10.1117/12.262533
Show Author Affiliations
Johannes Solhusvik, Ecole Nationale Superieure de l'Aeronautique et de l'Espace (France)
Cyril Cavadore, Ecole Nationale Superieure de l'Aeronautique et de l'Espace (France)
F. X. Audoux, Ecole Nationale Superieure de l'Aeronautique et de l'Espace (France)
N. Verdier, Ecole Nationale Superieure de l'Aeronautique et de l'Espace (France)
Jean A. Farre, Ecole Nationale Superieure de l'Aeronautique et de l'Espace (France)
Olivier Saint-Pe, Matra Marconi Space (France)
Robert Davancens, Matra Marconi Space (France)
J. P. David, CERT-ONERA (France)


Published in SPIE Proceedings Vol. 2950:
Advanced Focal Plane Arrays and Electronic Cameras
Thierry M. Bernard, Editor(s)

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