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Proceedings Paper

Resonant IR laser-induced diffusion of oxygen in silicon
Author(s): M. V. Artsimovich; A. N. Baranov; V. V. Krivov; Eugene M. Kudriavtsev; Emma N. Lotkova; B. H. Makeev; I. F. Mogilnik; V. N. Pavlovich; B. N. Romanuk; V. I. Soroka; V. V. Tokarevski; Sergey D. Zotov
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Paper Abstract

The analysis of experimental data on resonant IR laser-induced diffusion of oxygen in silicon are presented in this work.Resonant irradiation leads to the increase of oxygen diffusion coefficient which corresponds to increase of effective temperature of the crystal approximately by three times. The control experiments included changing of laser emission wave length (10.6 and 5 mkm instead of 9.2 mkm) and turning of direction of electric vector oscillation of plane polarized laser light.

Paper Details

Date Published: 1 February 1991
PDF: 5 pages
Proc. SPIE 1397, 8th Intl Symp on Gas Flow and Chemical Lasers, (1 February 1991); doi: 10.1117/12.26001
Show Author Affiliations
M. V. Artsimovich, Institute for Nuclear Research (Ukraine)
A. N. Baranov, P. N. Lebedev Physical Institute (Russia)
V. V. Krivov, P. N. Lebedev Physical Institute (Russia)
Eugene M. Kudriavtsev, P. N. Lebedev Physical Institute (Russia)
Emma N. Lotkova, P. N. Lebedev Physical Institute (Russia)
B. H. Makeev, P. N. Lebedev Physical Institute (Russia)
I. F. Mogilnik, Institute for Nuclear Research (Ukraine)
V. N. Pavlovich, Institute for Nuclear Research (Ukraine)
B. N. Romanuk, Institute of Semiconductors (Ukraine)
V. I. Soroka, Institute for Nuclear Research (Ukraine)
V. V. Tokarevski, Institute for Nuclear Research (Ukraine)
Sergey D. Zotov, P. N. Lebedev Physical Institute (Russia)


Published in SPIE Proceedings Vol. 1397:
8th Intl Symp on Gas Flow and Chemical Lasers
Concepcion Maroto Domingo; Jose M. Orza, Editor(s)

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