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Proceedings Paper

New photovoltaic effect in semiconductor junctions n+/p
Author(s): E. Dominguez Ferrari; F. Encinas Sanz; Jose M. Guerra Perez
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Paper Abstract

The application of multiphotonic multistep absorption model to the 10,6 ?m wave lenght laser induced photovoltaic potentials in silicon junctions is discussed. First observations in Germanium junctions are reported.

Paper Details

Date Published: 1 February 1991
PDF: 3 pages
Proc. SPIE 1397, 8th Intl Symp on Gas Flow and Chemical Lasers, (1 February 1991); doi: 10.1117/12.25962
Show Author Affiliations
E. Dominguez Ferrari, Instituto Electronica de Comunicaciones (Spain)
F. Encinas Sanz, Univ. Complutense de Madrid (Spain)
Jose M. Guerra Perez, Univ. Complutense de Madrid (Spain)


Published in SPIE Proceedings Vol. 1397:
8th Intl Symp on Gas Flow and Chemical Lasers
Concepcion Maroto Domingo; Jose M. Orza, Editor(s)

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