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Proceedings Paper

Some sources of contaminants in the shuttle bay measured with temperature-controlled quartz crystal microbalances
Author(s): John J. Scialdone
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Paper Abstract

The sources of molecular deposits on a temperature- controlled quartz crystal microbalance (TQCM) attached to the shuttle bay wall at some distance from the payload and pointing out of the bay have been investigated. Explored as possible sources are: (1) the outgassing of the shuttle tiles treated with the water proofing di-methyl-ethoxy- silane (DMES) compound, scattered back by the ambient molecules into the bay; (2) The ambient scattered return flux of the outgassing from the RTV 560 silicone which is used as the adhesive for the tiles; (3) the ambient scattered return flux of the payload outgassing; (4) the return flux from outgassing source originating near, below, or adjacent to the package containing the TQCM; and (5) the self-scattering of venting plumes and outgassing above the monitor package depositing on the TQCM. In all of these sources, the magnitudes of the outgassing, of the leakage rates, and venting had to be estimated in the absence of data. The resulting analyses which can be useful for similar investigations, indicates that the outgassing from the tiles, the RTV, the payloads, or the shuttle may not have been the sources of the deposit (about 1 (mu) g/cm2 during the period from bay door opening and payload release from the bay). It appears more probable that the origin is the self- and/or ambient-scattered return fluxes originating near, below, or internal to the monitor package.

Paper Details

Date Published: 11 November 1996
PDF: 9 pages
Proc. SPIE 2864, Optical System Contamination V, and Stray Light and System Optimization, (11 November 1996); doi: 10.1117/12.258312
Show Author Affiliations
John J. Scialdone, NASA Goddard Space Flight Ctr. (United States)


Published in SPIE Proceedings Vol. 2864:
Optical System Contamination V, and Stray Light and System Optimization
Robert P. Breault; A. Peter M. Glassford; Stephen M. Pompea; Robert P. Breault; Stephen M. Pompea, Editor(s)

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