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Proceedings Paper

MOCVD of TlBaCaCuO: structure-property relations and progress toward device applications
Author(s): Norihito Hamaguchi; Robert C. Gardiner; Peter S. Kirlin
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Paper Abstract

Highly c-axis-oriented Tl2Ba2CaCu2O(x) thin films were grown on MgO(100) by MOCVD and post annealing processes. Resistive transitions of 105 K, critical current densities as high as 100,000 Amps/sq cm (4 K) and surface resistivities 1/2 to 1/5 that of a gold standard at 17 GHz (77 K) were obtained with unpatterned films. Thin TlBaCaCuO films functioned as bolometric detectors over a spectral range of 1.5 to 20 micron; no quantum or nonequilibrium effects were observed between 4 and 125 K. Fine features were delineated in the BaCaCuO thin films by wet chemical etching. After Tl incorporation, resistive transitions exceeding 103 K were observed in the patterned films.

Paper Details

Date Published: 1 March 1991
PDF: 11 pages
Proc. SPIE 1394, Progress In High-Temperature Superconducting Transistors and Other Devices, (1 March 1991); doi: 10.1117/12.25755
Show Author Affiliations
Norihito Hamaguchi, Advanced Technology Materials, Inc. (United States)
Robert C. Gardiner, Advanced Technology Materials, Inc. (United States)
Peter S. Kirlin, Advanced Technology Materials, Inc. (United States)


Published in SPIE Proceedings Vol. 1394:
Progress In High-Temperature Superconducting Transistors and Other Devices
Rajendra Singh; Jagdish Narayan; David T. Shaw, Editor(s)

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