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Proceedings Paper

Pulsed-laser deposition of YBa2Cu3O7-x thin films: processing, properties, and performance
Author(s): Ross E. Muenchausen; Stephen R. Foltyn; Xin Di Wu; Robert C. Dye; Nicholas S. Nogar; A. H. Carim; F. Heidelbach; D. Wayne Cooke; Robert C. Taber; Rod K. Quinn
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Paper Abstract

One and two inch diameter wafers of (100) LaAlO3 have been coated with thin films of YBa2Cu3O7_ by a pulsed laser deposition technique. Deposition parameters have been optimized to produce uniform, 90 K films which have surface resistance values between 0.4 and 0.8 mμ at 4 K and 22 GHz.

Paper Details

Date Published: 1 March 1991
PDF: 9 pages
Proc. SPIE 1394, Progress In High-Temperature Superconducting Transistors and Other Devices, (1 March 1991); doi: 10.1117/12.25751
Show Author Affiliations
Ross E. Muenchausen, Los Alamos National Lab. (United States)
Stephen R. Foltyn, Los Alamos National Lab. (United States)
Xin Di Wu, Los Alamos National Lab. (United States)
Robert C. Dye, Los Alamos National Lab. (United States)
Nicholas S. Nogar, Los Alamos National Lab. (United States)
A. H. Carim, The Pennsylvania State Univ. (United States)
F. Heidelbach, Univ. of California/Berkeley (United States)
D. Wayne Cooke, Los Alamos National Lab. (United States)
Robert C. Taber, Hewlett-Packard Labs. (United States)
Rod K. Quinn, Los Alamos National Lab. (United States)


Published in SPIE Proceedings Vol. 1394:
Progress In High-Temperature Superconducting Transistors and Other Devices
Rajendra Singh; Jagdish Narayan; David T. Shaw, Editor(s)

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