Share Email Print
cover

Proceedings Paper

Superconducting YBa2Cu3O7 films on Si and GaAs with conducting indium tin oxide buffer layers
Author(s): Jonathan H. James; Bruce J. Kellett; Andrea Gauzzi; Benjamin Dwir; Davor Pavuna
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Superconducting YBa2Cu3O7-delta (YBCO) thin films have been grown in situ by ion beam sputtering on Si and GaAs substrates with intermediate, conducting Indium Tin Oxide (ITO) buffer layers. Uniform, textured YBCO films on ITO exhibit Tc onset at 92K and Tc0 at 68K and 60K on Si and GaAs substrates respectively, the latter value is the highest Tc reported on GaAs. YBCO/ITO films exhibit metallic resistivity behavior. In situ YBCO films on SrTiO3 show Tc onset = 92K and Tc0 = 90.5K, transition widths are less than 1K. A simple optical bolometer has been constructed from YBCO films on SrTiO3. Tunnelling measurements have also been carried out using the first YBCO-Pb window-type tunnel junctions.

Paper Details

Date Published: 1 March 1991
PDF: 17 pages
Proc. SPIE 1394, Progress In High-Temperature Superconducting Transistors and Other Devices, (1 March 1991); doi: 10.1117/12.25731
Show Author Affiliations
Jonathan H. James, Swiss Federal Institute of Technology (Switzerland)
Bruce J. Kellett, Swiss Federal Institute of Technology (Switzerland)
Andrea Gauzzi, Swiss Federal Institute of Technology (Switzerland)
Benjamin Dwir, Swiss Federal Institute of Technology (Switzerland)
Davor Pavuna, Swiss Federal Institute of Technology (Switzerland)


Published in SPIE Proceedings Vol. 1394:
Progress In High-Temperature Superconducting Transistors and Other Devices
Rajendra Singh; Jagdish Narayan; David T. Shaw, Editor(s)

© SPIE. Terms of Use
Back to Top