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Proceedings Paper

In-situ interferometric measurements in a rapid thermal processor
Author(s): Jean-Marie R. Dilhac; Christian Ganibal; N. Nolhier; L. Amat
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Paper Abstract

Time Resolved Reflectivity (TRR) is first applied to the measurement of the solid phase epitaxial growth rate of As (60 keY 4. 1015 cm2) implanted (100) Si wafers. The thermal cycles consist of a fast heating phase (125C/s) followed by an isothermal plateau ranging between 520 and 624C. An activation energy of 2. 8 eV is found. TRR is then applied to temperature calibration vs. Germanium thin film melting point : it is demonstrated that reproducible results are given by the method and that it can replace thermocouples for optical pyrometer calibration. 1.

Paper Details

Date Published: 1 April 1991
PDF: 5 pages
Proc. SPIE 1393, Rapid Thermal and Related Processing Techniques, (1 April 1991); doi: 10.1117/12.25717
Show Author Affiliations
Jean-Marie R. Dilhac, Lab. d'Automatique et d'Analyse des Systemes/CNRS (France)
Christian Ganibal, Lab. d'Automatique et d'Analyse des Systemes/CNRS (France)
N. Nolhier, Lab. d'Automatique et d'Analyse des Systemes/CNRS (France)
L. Amat, Lab. d'Automatique et d'Analyse des Systemes/CNRS (France)


Published in SPIE Proceedings Vol. 1393:
Rapid Thermal and Related Processing Techniques
Rajendra Singh; Mehrdad M. Moslehi, Editor(s)

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