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Proceedings Paper

Fundamental mechanisms and doping effects in silicon infrared absorption for temperature measurement by infrared transmission
Author(s): James C. Sturm; Casper M. Reaves
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Paper Abstract

Infrared absorption in silicon has been investigated at elevated temperatures. The fundamental absorption process in lightly to moderately doped silicon at 1. 3 and 1. 55 zm have been identified as band-to-band and free carrier mechanisms respectively. The effects of heavy substrate doping on absorption at elevated temperature have also been studied. Significant deviations (10) from transmission vs. temperature as used to measure ternperature in a Rapid Thermal Processing system begin to occur with substrate doping levels of cm3.

Paper Details

Date Published: 1 April 1991
PDF: 7 pages
Proc. SPIE 1393, Rapid Thermal and Related Processing Techniques, (1 April 1991); doi: 10.1117/12.25714
Show Author Affiliations
James C. Sturm, Princeton Univ. (United States)
Casper M. Reaves, Princeton Univ. (United States)

Published in SPIE Proceedings Vol. 1393:
Rapid Thermal and Related Processing Techniques
Rajendra Singh; Mehrdad M. Moslehi, Editor(s)

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