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Proceedings Paper

Selective deposition of polycrystalline SixGe1-x by rapid thermal processing
Author(s): Mehmet C. Ozturk; Y. Zhong; D. T. Grider; M. Sanganeria; Jim J. Wortman; Michael A. Littlejohn
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Paper Abstract

Low pressure chemical vapor deposition (LPCVD) of polycrystalline SixGei. . x alloys in a cold-wall lamp heated rapid thermal processor was studied. SiGei. . alloys were deposited using the reactive gases GeHz and SiH2C12 in a hydrogen carrier gas. The depositions were performed at a total pressure of 2. 5Ton and at temperatures between 500C and 800C using GeH : SiH2C12 ratios ranging from 0. 025 to 1. 00. An enhancement in the deposition rate due to the addition of GeH was observed in agreement with earlier reports. The activation energy for deposition in the surface reaction limited regime varied from 20-30 Kcal/mole with the gas flow ratios used in this study. Results showed that SiGei. . alloys could be deposited selectively on silicon with no nucleation on Si02. Selective depositions were obtained when the GeH:SiH2Cl2 gas flow ratio was greater than 0. 2 regardless of the deposition temperature corresponding to a Ge content of 20 or higher in the films as determined by Auger Electron Spectroscopy (AES). Enhancement of the selectivity was attributed to the formation of highly volatile GeO. It was also shown that selectively deposited alloys could be used as diffusion sources to form very shallow ( 1000 A) pLn junctions in silicon by ion-implantation and rapid thermal annealing. 1.

Paper Details

Date Published: 1 April 1991
PDF: 10 pages
Proc. SPIE 1393, Rapid Thermal and Related Processing Techniques, (1 April 1991); doi: 10.1117/12.25711
Show Author Affiliations
Mehmet C. Ozturk, North Carolina State Univ. (United States)
Y. Zhong, North Carolina State Univ. (United States)
D. T. Grider, North Carolina State Univ. (United States)
M. Sanganeria, North Carolina State Univ. (United States)
Jim J. Wortman, North Carolina State Univ. (United States)
Michael A. Littlejohn, North Carolina State Univ. (United States)

Published in SPIE Proceedings Vol. 1393:
Rapid Thermal and Related Processing Techniques
Rajendra Singh; Mehrdad M. Moslehi, Editor(s)

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