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Proceedings Paper

Control of oxygen incorporation and lifetime measurement in Si1-xGex epitaxial films grown by rapid thermal chemical vapor deposition
Author(s): James C. Sturm; P. V. Schwartz; Erwin J. Prinz; Charles W. Magee
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Paper Abstract

Oxygen levels in epitaxial Sii_Ge films grown by rapid thermal chemical vapor deposition (RTCVD) have been reduced to under 2 x 1018 cm3 and the source of oxygen in films with higher oxygen concentration has been identified. Films with low oxygen levels have minority carrier lifetimes in the us range and Si/Sii_Ge/Si heterojunction bipolar transistors (BET''s) fabricated with low oxygen levels have near-ideal base currents which do not depend on the base composition.

Paper Details

Date Published: 1 April 1991
PDF: 8 pages
Proc. SPIE 1393, Rapid Thermal and Related Processing Techniques, (1 April 1991); doi: 10.1117/12.25710
Show Author Affiliations
James C. Sturm, Princeton Univ. (United States)
P. V. Schwartz, Princeton Univ. (United States)
Erwin J. Prinz, Princeton Univ. (United States)
Charles W. Magee, Evans East, Inc. (United States)


Published in SPIE Proceedings Vol. 1393:
Rapid Thermal and Related Processing Techniques
Rajendra Singh; Mehrdad M. Moslehi, Editor(s)

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