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Proceedings Paper

Si-based epitaxial growth by rapid thermal processing chemical vapor deposition
Author(s): Kissoo H. Jung; T. Y. Hsieh; Dim-Lee Kwong; D. B. Spratt
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Paper Abstract

Rapid thermal processing chemical vapor deposition (RTPCVD) has received considerable attention because of its ability to reduce many of the processing problems associated with thermal exposure in conventional chemical vapor deposition while still retaining the ability to grow high quality epitaxial layers. We have used RTPCVD to grow epitaxial films of undoped Si in-situ doped Si and Ge1Si1. Both bare Si substrates and Si-on-insulator (SOl) substrates were used. We have also demonstrated selective epitaxial growth (SEG) of Si using oxide masks. Our results show that RTPCVD is capable of growing high quality epitaxial layers with sharp concentration transition profiles. 1.

Paper Details

Date Published: 1 April 1991
PDF: 12 pages
Proc. SPIE 1393, Rapid Thermal and Related Processing Techniques, (1 April 1991); doi: 10.1117/12.25709
Show Author Affiliations
Kissoo H. Jung, Univ. of Texas/Austin (United States)
T. Y. Hsieh, Univ. of Texas/Austin (United States)
Dim-Lee Kwong, Univ. of Texas/Austin (United States)
D. B. Spratt, Texas Instruments Inc. (United States)


Published in SPIE Proceedings Vol. 1393:
Rapid Thermal and Related Processing Techniques
Rajendra Singh; Mehrdad M. Moslehi, Editor(s)

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