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Proceedings Paper

RTP-induced defects in silicon studied by positron annihilation technique
Author(s): N. M. Kulkarni; Revati N. Kulkarni; Arvind D. Shaligram
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Paper Details

Date Published: 1 April 1991
PDF: 8 pages
Proc. SPIE 1393, Rapid Thermal and Related Processing Techniques, (1 April 1991); doi: 10.1117/12.25706
Show Author Affiliations
N. M. Kulkarni, Univ. of Poona (India)
Revati N. Kulkarni, Univ. of Poona (India)
Arvind D. Shaligram, Univ. of Poona (India)


Published in SPIE Proceedings Vol. 1393:
Rapid Thermal and Related Processing Techniques
Rajendra Singh; Mehrdad M. Moslehi, Editor(s)

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