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Proceedings Paper

RTP-induced defects in silicon studied by positron annihilation technique
Author(s): N. M. Kulkarni; Revati N. Kulkarni; Arvind D. Shaligram
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Paper Abstract

Rapid Thermal Processing (RTP) technique finds its success in microelectronics due to shorter time and energy cosumption than conventional furnace processing. There is no further impurity redistribution which is of great interest for VLSIs researchers. This is mainly because of shorter time scale. Rapid heating and cooling in the process may give rise to defects. These RTP-induced defects have been first time probed by Positron Annihilation Technique(PAT). Positron annihilation methods have been proved as a powerful tool for studing defects in solids. The increasing interest in technique stems from its defects sensitive and non destructive nature. Positron lifetime measurements on samples silicon dioxide grown by furnace methods and RTA are presented and discussed. The data obtained from PAT gives information regarding nature of defects in material. 1 .

Paper Details

Date Published: 1 April 1991
PDF: 8 pages
Proc. SPIE 1393, Rapid Thermal and Related Processing Techniques, (1 April 1991); doi: 10.1117/12.25706
Show Author Affiliations
N. M. Kulkarni, Univ. of Poona (India)
Revati N. Kulkarni, Univ. of Poona (India)
Arvind D. Shaligram, Univ. of Poona (India)


Published in SPIE Proceedings Vol. 1393:
Rapid Thermal and Related Processing Techniques
Rajendra Singh; Mehrdad M. Moslehi, Editor(s)

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