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Proceedings Paper

High-density chip-to-chip interconnect system for GaAs semiconductor devices
Author(s): Stewart C. Wigginton; Scott E. Davidson; William L. Harting
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Paper Abstract

A unique method has been developed for interconnecting a GaAs semiconductor device to an Application Specific Integrated Circuit (ASIC) chip. The device has 400 control points on a 25 im pitch. A silicon interconnect chip with cantilevered gold beam leads having the same packing density as the GaAs device and ASIC chip was designed to " bridge" the space between the two. Special photolithographic steps had to be developed to fabricate beams 250 pm long X 9 tm thick. The methods for fabricating the bridge chip and its final assembly will be discussed.

Paper Details

Date Published: 1 April 1991
PDF: 8 pages
Proc. SPIE 1390, Microelectronic Interconnects and Packages: System and Process Integration, (1 April 1991); doi: 10.1117/12.25612
Show Author Affiliations
Stewart C. Wigginton, McDonnell Douglas Electronic Systems Co. (United States)
Scott E. Davidson, McDonnell Douglas Electronic Systems Co. (United States)
William L. Harting, McDonnell Douglas Electronic Systems Co. (United States)


Published in SPIE Proceedings Vol. 1390:
Microelectronic Interconnects and Packages: System and Process Integration
Stuart K. Tewksbury; John R. Carruthers, Editor(s)

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