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Proceedings Paper

GE high-density interconnect: a solution to the system interconnect problem
Author(s): Michael S. Adler
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Paper Abstract

General Electric Corporate Research and Development Schenectady NY 12301 Technology Overview GE''s High Density Interconnect (GE-HDI) is an excellent solution to the digital multichip packaging problem as well as offering solutions to other difficult system interconnect problems in analog power microwave display and sensors. While it is a rapidly evolving technology it has been applied successfully to a broad class of over 20 applications. It offers the highest density performance reliability and in addition rapid prototyping repairability and extension to tomorrow''s technologies such as three dimensional assemblies. The General Electric High Density Interconnect (GE-HDI) process is a proprietary process for interconnecting bare chips bonded to a ceramic substrate with ultra-fine metal lines drawn with the help of a computer-guided laser. The chips almost touch one another thus achieving silicon area densities for the module that can reach 90. The lines are ultrafine but also ultra-reliable thanks to the nature of the process. The interconnect is an overlay of multiple levels of copper polymide placed on top of the chips. The connection to the die is vacuum sputtered metal followed by plated copper. With the complete absence of conventional die interconnects such as wire bonds tape or solder bumps which are the greatest cause of failures reliability as well as performance are greatly enhanced. In actuality the HDI process is an extension of wafer processing which reliably makes hundreds of thousands of

Paper Details

Date Published: 1 April 1991
PDF: 5 pages
Proc. SPIE 1390, Microelectronic Interconnects and Packages: System and Process Integration, (1 April 1991); doi: 10.1117/12.25604
Show Author Affiliations
Michael S. Adler, General Electric Co. (United States)

Published in SPIE Proceedings Vol. 1390:
Microelectronic Interconnects and Packages: System and Process Integration
Stuart K. Tewksbury; John R. Carruthers, Editor(s)

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