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Proceedings Paper

Vertical 3-D integration of silicon waveguides in a Si-SiO2-Si-SiO2-Si structure
Author(s): Richard A. Soref; Fereydoon Namavar; Elisabetta Cortesi; Lionel R. Friedman; Richard Lareau
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Paper Abstract

We have built and tested new multiple-layer silicon optical waveguide structures that have applications in wafer-scale optical interconnects. A repeated sequence of oxygen implantation annealing and Si epitaxy was used to make 5-layer or 6-layer structures containing a pair of 2- jim-thick Si waveguide cores separated by 1200A or 3700A of Si02. Coupled or uncoupled dual waveguiding at 1. 3 xm was observed. Inter-guide coupling for this stacked 3-D structure is analyzed here. Applications to all-silicon guided-wave optical interconnects are discussed.

Paper Details

Date Published: 1 April 1991
PDF: 14 pages
Proc. SPIE 1389, Microelectronic Interconnects and Packages: Optical and Electrical Technologies, (1 April 1991); doi: 10.1117/12.25543
Show Author Affiliations
Richard A. Soref, Rome Lab. (United States)
Fereydoon Namavar, Spire Corp. (United States)
Elisabetta Cortesi, Spire Corp. (United States)
Lionel R. Friedman, Worcester Polytechnic Institute (United States)
Richard Lareau, Worcester Polytechnic Institute (United States)


Published in SPIE Proceedings Vol. 1389:
Microelectronic Interconnects and Packages: Optical and Electrical Technologies
Gnanalingam Arjavalingam; James Pazaris, Editor(s)

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