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Proceedings Paper

Harmonic generation in the reflection of microwave radiation from semiconductor surface
Author(s): Andrew V. Shepelev; M. Y. Glotova; Alexander V. Shvartsburg
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Paper Abstract

Nonlinear reflection of radiation in the range of 0.3 - 5 mm from semiconductor surfaces is analyzed. When external field (including wave field) influences the semiconductor charge carries, the carriers temperature increases in comparison with the lattice one. As a result, the time interval of the pulse relaxation and, consequently, the dielectric constant varies. Thus, the heating of the carriers by the microwave radiation field leads to the dependence of reflection coefficient on the field, i.e., to the generation of harmonics. Analytical and numerical estimations of the harmonic generation efficiency are carried out. An interesting effect of the generation efficiency decrease under the wave amplitude increase is discovered. This is explained by the fact that the wave frequency is close to the resonant frequency of the plasma free carriers.

Paper Details

Date Published: 28 October 1996
PDF: 3 pages
Proc. SPIE 2843, Intense Microwave Pulses IV, (28 October 1996); doi: 10.1117/12.255404
Show Author Affiliations
Andrew V. Shepelev, Central Design Bureau for Unique Instrumentation (Russia)
M. Y. Glotova, Central Design Bureau for Unique Instrumentation (Russia)
Alexander V. Shvartsburg, Central Design Bureau for Unique Instrumentation (Russia)

Published in SPIE Proceedings Vol. 2843:
Intense Microwave Pulses IV
Howard E. Brandt, Editor(s)

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