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Proceedings Paper

GaAs homojunction interfacial workfunction internal photoemission far-infrared detectors
Author(s): Henry X. Yuan; A. G. Unil Perera; M. H. Francombe; Sisira Kankanam Gamage; Hui Chun Liu; Margaret Buchanan; William J. Schaff
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Paper Abstract

We report, for the first time, experimental FIR detector results based on p-GaAs homojunction interfacial workfunction internal photoemission (HIWIP) structures. The MBE grown samples consist of a multilayer (p+- p--p+-p--...) structure. The detector shows high responsivity over a wide wavelength range with a bias tunable cutoff wavelength ((lambda) c). Changing the emitter layer (p+) doping concentration (Ne) will result in different (lambda) cs. For a detector with Ne equals 3 multiplied by 1018 cm-3, an effective quantum efficiency of 9.2% (at 26.3 micrometer) with (lambda) c equals 100 micrometer is obtained. Various experimental results are discussed.

Paper Details

Date Published: 22 October 1996
PDF: 8 pages
Proc. SPIE 2816, Infrared Detectors for Remote Sensing: Physics, Materials, and Devices, (22 October 1996); doi: 10.1117/12.255156
Show Author Affiliations
Henry X. Yuan, Georgia State Univ. (United States)
A. G. Unil Perera, Georgia State Univ. (United States)
M. H. Francombe, Georgia State Univ. (United States)
Sisira Kankanam Gamage, Georgia State Univ. (United States)
Hui Chun Liu, National Research Council Canada (Canada)
Margaret Buchanan, National Research Council Canada (Canada)
William J. Schaff, Cornell Univ. (United States)

Published in SPIE Proceedings Vol. 2816:
Infrared Detectors for Remote Sensing: Physics, Materials, and Devices
Randolph E. Longshore; Jan W. Baars, Editor(s)

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