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Proceedings Paper

Photoconductive HgCdTe detector assemblies for the GOES imager and sounder instruments
Author(s): Jeanne M. Hartley; Marion B. Reine; C. Lynne Terzis; Anthony J. Verrilli; Richard A. Hassler; Edward P. Lesondak
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Paper Abstract

The GOES Imager and Sounder instruments each utilize several HgCdTe photoconductive (PC) detectors and detector arrays for detection over the 6.5 to 14.7 micrometers region. These high performance detectors are integrated with germanium aplanat lenses and mounted in miniature hermetically sealed housings. There are demanding requirements on the radiometric performance of these detector assemblies. For LW Sounder detectors, the highest possible sensitivity achievable by a practical HgCdTe photoconductor at the operating temperatures of 100 to 105 K was required. Lockheed Martin designed, fabricated, tested, packaged, qualified, and delivered 7 of the 11 HgCdTe PC detector assemblies for GOES-8, and 9 of the 11 assemblies for GOES- 9. All the n-type HgCdTe starting material was grown at Lockheed Martin.

Paper Details

Date Published: 18 October 1996
PDF: 10 pages
Proc. SPIE 2812, GOES-8 and Beyond, (18 October 1996); doi: 10.1117/12.254096
Show Author Affiliations
Jeanne M. Hartley, Lockheed Martin IR Imaging Systems (United States)
Marion B. Reine, Lockheed Martin IR Imaging Systems (United States)
C. Lynne Terzis, Lockheed Martin IR Imaging Systems (United States)
Anthony J. Verrilli, Lockheed Martin IR Imaging Systems (United States)
Richard A. Hassler, Lockheed Martin IR Imaging Systems (United States)
Edward P. Lesondak, Lockheed Martin IR Imaging Systems (United States)

Published in SPIE Proceedings Vol. 2812:
GOES-8 and Beyond
Edward R. Washwell, Editor(s)

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