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Thickness dependence of Cr-doped VO2 thin films deposition by reactive pulsed magnetron sputtering
Author(s): Huan Guan; Dongping Zhang; Jingcheng Jin; Yu Yang; Yi Huang; Qicong He; Ping Fan
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Paper Abstract

Due to the interesting phase transition properties, Vanadium dioxide is a promising materials for smart windows. But phase transition temperature of 68° is high for this application. Doping is an useful method for transition temperature reducing in previous works. In this paper, different thickness VO2 films were prepared by reactive pulsed magnetron sputtering, and a novel doping method was employed to reduce transition temperature. The results of XRD, Raman, transmittance spectra, and thermal hysteresis reveal that the transition temperature of un-doped samples is about 54~58°, and the increasing of phase transition amplitude and optical transmittance in visible decreasing with film thickness was observed. While for doped samples, all the transition temperatures reduced below 37°. For the thin thickness 12.5nm and 25nm, which phase transition performance deteriorated seriously. The thickness 25nm deposited for 1.5 h has the optimal performance of high optical transmittance and high IR adjustment ability.

Paper Details

Date Published: 8 July 2019
PDF: 9 pages
Proc. SPIE 11064, Tenth International Conference on Thin Film Physics and Applications (TFPA 2019), 1106403 (8 July 2019); doi: 10.1117/12.2540082
Show Author Affiliations
Huan Guan, Shenzhen Univ. (China)
Dongping Zhang, Shenzhen Univ. (China)
Jingcheng Jin, Shenzhen Univ. (China)
Yu Yang, Shenzhen Univ. (China)
Yi Huang, Shenzhen Univ. (China)
Qicong He, Shenzhen Univ. (China)
Ping Fan, Shenzhen Univ. (China)


Published in SPIE Proceedings Vol. 11064:
Tenth International Conference on Thin Film Physics and Applications (TFPA 2019)
Junhao Chu; Jianda Shao, Editor(s)

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