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High-NA EUV imaging: challenges and outlook
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Paper Abstract

The continuation of Moore’s law demands the continuous development of EUV lithography. After the NXE:3400B scanner, currently being inserted in high-volume manufacturing (HVM), the next logical step is to increase the numerical aperture (NA) of the EUV projection optics, from 0.33 to 0.55, resulting in a high-NA EUV scanner. Looking back at the history of lithography tools developed in the last decades, we can see that such an increase of NA is, in relative terms, unprecedented (0.55 = 0.33 + 67%). This significant step forward in the NA is a challenge on many fronts and requires many adaptations. In this paper you will find an overview of the key concepts that make high-NA lithography different on imaging end, how the imaging assures the continued life of Moore’s law for the years to come and what are potential mask-related developments that would contribute to high-NA’s success.

Paper Details

Date Published: 29 August 2019
PDF: 10 pages
Proc. SPIE 11177, 35th European Mask and Lithography Conference (EMLC 2019), 111770I (29 August 2019); doi: 10.1117/12.2536329
Show Author Affiliations
Bartosz Bilski, Carl Zeiss SMT GmbH (Germany)
Jörg Zimmermann, Carl Zeiss SMT GmbH (Germany)
Matthias Roesch, Carl Zeiss SMT GmbH (Germany)
Jack Liddle, Carl Zeiss SMT GmbH (Germany)
Eelco van Setten, ASML Netherlands B.V. (Netherlands)
Gerardo Bottiglieri, ASML Netherlands B.V. (Netherlands)
Jan van Schoot, ASML Netherlands B.V. (Netherlands)


Published in SPIE Proceedings Vol. 11177:
35th European Mask and Lithography Conference (EMLC 2019)
Uwe F.W. Behringer; Jo Finders, Editor(s)

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