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Alternative mask materials for low-k1 EUV imaging
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Paper Abstract

EUV lithography is being used at relatively high-k1 Rayleigh factors. Advancing EUV to smaller resolution requires several technological advancements. The EUV reticle is a strong contributor that limits current EUV imaging performance. Improvements with advanced mask types are required to reduce mask 3D effects and to improve image contrast. This will enable low-k1 resolution with reduced stochastic defect rates. In this paper we discuss what the requirements of high-k absorber masks and attenuated phase shift masks are to achieve optimal imaging performance. Recommendations on the mask stack composition and the application of mask types to different use cases are based on the physical understanding of the mask diffraction spectrum.

Paper Details

Date Published: 29 August 2019
PDF: 7 pages
Proc. SPIE 11177, 35th European Mask and Lithography Conference (EMLC 2019), 111770Y (29 August 2019); doi: 10.1117/12.2535682
Show Author Affiliations
Frank J. Timmermans, ASML Netherlands B.V. (Netherlands)
Claire van Lare, ASML Netherlands B.V. (Netherlands)
Jo Finders, ASML Netherlands B.V. (Netherlands)


Published in SPIE Proceedings Vol. 11177:
35th European Mask and Lithography Conference (EMLC 2019)
Uwe F.W. Behringer; Jo Finders, Editor(s)

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