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Proceedings Paper

Preparation of silicon-based field emission materials
Author(s): Guang Yuan; Young-Hyun Jin; C. Jin; Bin Zhang; Hee Chun Song; Yongqiang Ning; T. Zhou; H. Jiang; Sijia Li; Ying Tian; C. Gu
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Paper Abstract

The tip arrays on (100) oriented silicon were fabricated, and diamond films were deposited on the tip arrays by MW- PCVD method. The diamond was preferentially grown on the top of tips, and diamond film with (111) orientation was formed.

Paper Details

Date Published: 30 September 1996
PDF: 3 pages
Proc. SPIE 2892, Display Devices and Systems, (30 September 1996); doi: 10.1117/12.253350
Show Author Affiliations
Guang Yuan, Changchun Institute of Physics (China)
Young-Hyun Jin, Changchun Institute of Physics (China)
C. Jin, Changchun Institute of Physics (China)
Bin Zhang, Changchun Institute of Physics (China)
Hee Chun Song, Changchun Institute of Physics (China)
Yongqiang Ning, Changchun Institure of Physics (China)
T. Zhou, Changchun Institute of Physics (China)
H. Jiang, Changchun Institute of Physics (China)
Sijia Li, Changchun Institute of Physics (China)
Ying Tian, Changchun Institute of Physics (China)
C. Gu, Changchun Institute of Physics (China)


Published in SPIE Proceedings Vol. 2892:
Display Devices and Systems
Eric G. Lean; Zhiren Tian; Bao Gang Wu, Editor(s)

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