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Proceedings Paper

Green photoluminescence from nc-Ge particles
Author(s): Peiyi Chen; Huaizhe Xu; Meifang Zhu; Boyuan Hou
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Paper Abstract

Nanocrystalline Ge particles embedded in glassy SiO2 matrix were prepared by rf cosputtering technique and the followed thermal annealing at 600 degree(s)C. Multiple-peak structure around 2.26 ev in photoluminescence spectrum of annealed sample was observed at room temperature, and variation of PL with excitation wavelengths in a range from 457.9 nm to 514.5 nm has been systematically measured and investigated. Raman scattering and X-ray photoelectron spectroscopy measurements strongly suggested existence of Ge nanocrystalline particulates in the SiO2 matrices. The size of nc-Ge is dependent on thermal treatment condition. A preliminary discussion about the origin of such visible photoluminescence phenomenon is presented.

Paper Details

Date Published: 30 September 1996
PDF: 4 pages
Proc. SPIE 2892, Display Devices and Systems, (30 September 1996); doi: 10.1117/12.253340
Show Author Affiliations
Peiyi Chen, Tsinghua Univ. (China)
Huaizhe Xu, National Lab. for Superlattices and Microstructures (China)
Meifang Zhu, National Lab. for Superlattices and Microstructures (China)
Boyuan Hou, National Lab. for Superlattices and Microstructures (China)


Published in SPIE Proceedings Vol. 2892:
Display Devices and Systems
Eric G. Lean; Zhiren Tian; Bao Gang Wu, Editor(s)

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