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Application of femtosecond frequency combs in the measuerment of film thickness
Author(s): A. Ainijiang; A. Abuduresuli
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Paper Abstract

In this paper, a method to measure the thickness of TiO2 is developed based on the Micklson interferometer. Through a spectral domain analysis of multiple interferograms obtained using a femtosecond pulse laser, accroding to the interferance signals appear in the interferograms the thickness of film can be measured at high speed. we developed a simple method to measure the film thickness and for a sample we use the silicon wafer and coated TiO2 silicon wafer. Thickness of silicon wafer and coated TiO2 silicon wafer were measured respectivly, then from the thickness of coated TiO2 silicon wafer minus the thickness of silicon wafer. Result shows that the avarege thickness of TiO2 is 75.00μm.

Paper Details

Date Published: 17 May 2019
PDF: 5 pages
Proc. SPIE 11170, 14th National Conference on Laser Technology and Optoelectronics (LTO 2019), 111700Z (17 May 2019); doi: 10.1117/12.2532673
Show Author Affiliations
A. Ainijiang, Xinjiang Univ. (China)
A. Abuduresuli, Xinjiang Univ. (China)


Published in SPIE Proceedings Vol. 11170:
14th National Conference on Laser Technology and Optoelectronics (LTO 2019)
Jianqiang Zhu; Weibiao Chen; Zhenxi Zhang; Minlin Zhong; Pu Wang; Jianrong Qiu, Editor(s)

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