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Optimum growth parameters of InAs/AlSb superlattices for interband cascade lasers
Author(s): Yi Zhang; Fu-Hui Shao; Cheng-Ao Yang; Sheng-Wen Xie; Shu-Shan Huang; Ye Yuan; Jin-Ming Shang; Yu Zhang; Ying-Qiang Xu; Hai-Qiao Ni; Zhi-Chuan Niu
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Paper Abstract

We report the optimum growth parameters of InAs/AlSb superlattices (SLs) for interband cascade lasers (ICL) grown by the solid-source molecular beam epitaxy(MBE). The InAs/AlSb superlattices samples were grown on GaSb substrate at different temperatures and characterized by high resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM) and photoluminescence (PL). By changing the group-Ⅴ flux ratio during the SLs growth, the InAs/AlSb superlattices matched to GaSb substrate were obtained. Subsequently, the SLs were grown at different growth temperature. By photoluminescence we found the highest PL intensity was obtained when the SLs samples were grown at 458°C and the PL wavelength is at 1730 nm. From 10 × 10 μm2 AFM image, we found the root mean square (RMS) of the sample grown at 458°C was 1.96 Å which indicates the low surface roughness and god surface morphology.

Paper Details

Date Published: 17 May 2019
PDF: 6 pages
Proc. SPIE 11170, 14th National Conference on Laser Technology and Optoelectronics (LTO 2019), 111700V (17 May 2019); doi: 10.1117/12.2532548
Show Author Affiliations
Yi Zhang, Institute of Semiconductors (China)
Fu-Hui Shao, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Cheng-Ao Yang, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Sheng-Wen Xie, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Shu-Shan Huang, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Ye Yuan, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Jin-Ming Shang, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Yu Zhang, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Ying-Qiang Xu, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Hai-Qiao Ni, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Zhi-Chuan Niu, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)


Published in SPIE Proceedings Vol. 11170:
14th National Conference on Laser Technology and Optoelectronics (LTO 2019)
Jianqiang Zhu; Weibiao Chen; Zhenxi Zhang; Minlin Zhong; Pu Wang; Jianrong Qiu, Editor(s)

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