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Proceedings Paper

Photorefractive AlGaAs/GaAs multiple quantum well structures: growth and optical studies
Author(s): W. Feng; Zhiguo Zhang; Y. Yu; Q. Huang; J. M. Zhou; Panming Fu
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Paper Abstract

We report the growth of photorefractive AlGaAs/GaAs multiple quantum well (MQW) structures by molecular beam epitaxy at low temperatures (LT). The LT MQW materials are semi- insulating as-grown. The AsGa-related defects incorporated into the LT materials during low temperature growth provide the required deep centers for photorefractive applications. We have investigated the effect of growth conditions on optical properties of LT MQW structures. Under optimized growth condition, MQW structures have been grown semi-insulating while retaining high optical quality. The strong electro-optic effects were observed near excitonic absorption edge. The photorefractive wave mixing in AlGaAs/GaAs MQW structures was performed under Frenz-Keldysh geometry. An output diffraction efficiency higher than 0.84% and a two-wave-mixing gain more than 3000 cm-1 have been obtained under dc electric field of 15 kv/cm.

Paper Details

Date Published: 30 September 1996
PDF: 6 pages
Proc. SPIE 2896, Photorefractive Materials, (30 September 1996); doi: 10.1117/12.253223
Show Author Affiliations
W. Feng, Institute of Physics (China)
Zhiguo Zhang, Institute of Physics (China)
Y. Yu, Institute of Physics (China)
Q. Huang, Institite of Physics (China)
J. M. Zhou, Institute of Physics (China)
Panming Fu, Institute of Physics (China)


Published in SPIE Proceedings Vol. 2896:
Photorefractive Materials
Ratnakar R. Neurgaonkar; Tsutomu Shimura; Peixian Ye, Editor(s)

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