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Proceedings Paper

High-performance 1.3-um and 1.55-um InGaAsP/InP strained-layer quantum well lasers grown by LP-MOCVD
Author(s): Xiaoyu Ma; Shutang Wang; Feike Xiong; Liang Guo; Zhongming Wang; Liming Wang; Xiaoyan Zhang; Guoxi Sun; Caihong Xia; Tian Zhu; Yali Yang; Hongqin Zhang; Guangping He; Shuqin Yao; Kekui Bi; Lianhui Chen
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Paper Abstract

High performance 1.3 micrometers and 1.55 micrometers InGaAsP/InP strained layer quantum well (SL-QW) lasers grown by low pressure metal organic chemical vapor deposition are reported in this paper. 1.3 micrometers SL-QW lasers and 1.55 micrometers SL-QW lasers with broad area threshold current densities as low as 400 A/cm2 and 450 A/cm2 (at cavity length 400 micrometers ), DC-PBH stripe device threshold currents of 5 approximately 10 mA and 6 approximately 10 mA were obtained, respectively. The prediction life time of 1.3 micrometers SL-QW lasers is more than 106 hrs at 25 degree(s)C, and degeneration activated energy is 0.682 eV according to the accelerate aging tests.

Paper Details

Date Published: 30 September 1996
PDF: 6 pages
Proc. SPIE 2891, Integrated Optoelectronics, (30 September 1996); doi: 10.1117/12.253174
Show Author Affiliations
Xiaoyu Ma, Institute of Semiconductors (China)
Shutang Wang, Institute of Semiconductors (China)
Feike Xiong, Institute of Semiconductors (China)
Liang Guo, Institute of Semiconductors (China)
Zhongming Wang, Institute of Semiconductors (China)
Liming Wang, Institute of Semiconductors (China)
Xiaoyan Zhang, Institute of Semiconductors (China)
Guoxi Sun, Institute of Semiconductors (China)
Caihong Xia, Institute of Semiconductors (China)
Tian Zhu, Institute of Semiconductors (China)
Yali Yang, Institute of Semiconductors (China)
Hongqin Zhang, Institute of Semiconductors (China)
Guangping He, Institute of Semiconductors (China)
Shuqin Yao, Institute of Semiconductors (China)
Kekui Bi, Institute of Semiconductors (China)
Lianhui Chen, Institute of Semiconductors (China)


Published in SPIE Proceedings Vol. 2891:
Integrated Optoelectronics
Ray T. Chen; Won-Tien Tsang; BingKun Zhou, Editor(s)

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