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Proceedings Paper

GaAs/GaAlAs multiple quantum well electroreflectance modulators
Author(s): Hongda Chen; Zhibiao Chen; Wen Gao; Rong Han Wu
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Paper Abstract

In this paper, physical analyses on the characterization of the electroreflectance modulator are concerned, which include quantum confined Stark effect and asymmetric Fabry- Perot cavity effect and so on. Experimental results are provided to demonstrate the properties of normally-off and normally-on devices. The developed technology is used to tune the mode to the proper position to improve the contrast ratio of modulators.

Paper Details

Date Published: 30 September 1996
PDF: 4 pages
Proc. SPIE 2891, Integrated Optoelectronics, (30 September 1996); doi: 10.1117/12.253173
Show Author Affiliations
Hongda Chen, Institute of Semiconductors (China)
Zhibiao Chen, Institute of Semiconductors (China)
Wen Gao, Institute of Semiconductors (China)
Rong Han Wu, Institute of Semiconductors (China)


Published in SPIE Proceedings Vol. 2891:
Integrated Optoelectronics
Ray T. Chen; Won-Tien Tsang; BingKun Zhou, Editor(s)

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