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Proceedings Paper

Simulated calculation of temperature rise in silicon material irradiated by high-power laser
Author(s): Zhonghua Shen; Jian Lu; Xiao-Wu Ni
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Paper Abstract

Considering the variety of thermal properties of silicon material and the spatial profile of incident laser, the temperature rise in silicon material has been obtained by using a 2D model of heat conduction, the relation between the time needed for the surface to reach melting point and the power density of the incident laser has also been given out and the results have been compared with those obtained by using a 1D model.

Paper Details

Date Published: 30 September 1996
PDF: 5 pages
Proc. SPIE 2888, Laser Processing of Materials and Industrial Applications, (30 September 1996); doi: 10.1117/12.253130
Show Author Affiliations
Zhonghua Shen, Nanjing Univ. of Science and Technology (China)
Jian Lu, Nanjing Univ. of Science and Technology (China)
Xiao-Wu Ni, Nanjing Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 2888:
Laser Processing of Materials and Industrial Applications
Shu-Sen Deng; S. C. Wang, Editor(s)

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